Ultrasonic transducer systems including tuned resonators, equipment including such systems, and methods of providing the same

ABSTRACT

An ultrasonic transducer system is provided. The ultrasonic transducer system includes: a transducer mounting structure; a transducer, including at least one mounting flange for coupling the transducer to the transducer mounting structure; and a tuned resonator having a desired resonant frequency, the tuned resonator being integrated with at least one of the transducer mounting structure and the at least one mounting flange.

CROSS REFERENCE

This application is a continuation of U.S. patent application Ser. No.16/454,873 filed on Jun. 27, 2019, which is a continuation of U.S.patent application Ser. No. 15/894,617 filed on Feb. 12, 2018, whichclaims the benefit of U.S. Provisional Patent Application No. 62/460,793filed Feb. 18, 2017, the contents of each of which are incorporatedherein by reference.

FIELD

The invention relates to ultrasonic transducer systems, and moreparticularly, to improved ultrasonic transducer systems including tunedresonators, as well as equipment including such ultrasonic transducersystems, and methods of using the same.

BACKGROUND

Ultrasonic transducers are used in various applications. For example,such ultrasonic transducers are widely used in semiconductor packagingequipment such as automatic wire bonding machines (e.g., ball bondingmachines, wedge bonding machines, ribbon bonding machines, etc.) andadvanced packaging machines (e.g., flip chip bonding machines such asthermocompression bonding machines, etc.).

An exemplary conventional wire bonding sequence includes: (1) forming afirst bond of a wire loop on a bonding location of a first semiconductorelement (such as a semiconductor die) using a wire bonding tool; (2)extending a length of wire, continuous with the first bond, from thefirst semiconductor element to a second semiconductor element (or asubstrate, such as a leadframe, supporting the first semiconductorelement); (3) bonding the wire to a bonding location of the secondsemiconductor element (or the substrate), using the bonding tool, toform a second bond of the wire loop; and (5) severing the wire from awire supply, thereby forming the wire loop. In forming the bonds between(a) the ends of the wire loop, and (b) the bond locations, ultrasonicenergy provided by an ultrasonic transducer is utilized.

An exemplary flip chip bonding sequence includes: (1) aligning firstconductive structures of a first semiconductor element (such as asemiconductor die) with second conductive structures of a secondsemiconductor element; (2) bonding the first semiconductor element tothe second semiconductor element utilizing ultrasonic bonding energy(and perhaps heat and/or force) such that corresponding pairs of thefirst conductive structures and second conductive structures are bondedtogether (where solder material may be included in the interconnectionbetween the first conductive structures and the second conductivestructures).

U.S. Pat. No. 5,595,328 (titled “SELF ISOLATING ULTRASONIC TRANSDUCER”);U.S. Pat. No. 5,699,953 (titled “MULTI RESONANCE UNIBODY ULTRASONICTRANSDUCER”); U.S. Pat. No. 5,884,834 (titled “MULTI-FREQUENCYULTRASONIC WIRE BONDER AND METHOD”); U.S. Pat. No. 7,137,543 (titled“INTEGRATED FLEXURE MOUNT SCHEME FOR DYNAMIC ISOLATION OF ULTRASONICTRANSDUCERS”); U.S. Pat. No. 8,251,275 (titled “ULTRASONIC TRANSDUCERSFOR WIRE BONDING AND METHODS OF FORMING WIRE BONDS USING ULTRASONICTRANSDUCERS”); and U.S. Pat. No. 9,136,240 (titled “SYSTEMS AND METHODSFOR BONDING SEMICONDUCTOR ELEMENTS”) relate to ultrasonic transducersand are herein incorporated by reference in their entirety. Ultrasonicbonding energy is typically applied using an ultrasonic transducer,where the bonding tool is attached to the transducer. The transducertypically includes a driver such as a stack of piezoelectric elements(e.g., piezoelectric crystals, piezoelectric ceramics, etc.). Electricalenergy is applied to the driver, and converts the electrical energy tomechanical energy, thereby moving the bonding tool tip in a scrubbingmotion.

In the use of such transducers, challenges exist when the mountingstructure has a resonant frequency that coincides with (or is near) anoperating mode of the transducer. Such challenges are particularlydifficult with respect to ultrasonic transducers configured to operateat a plurality of frequencies. That is, while certain transducers may beoptimized for operation at a first operating mode (e.g., a highfrequency mode), the transducers may have issues with impedancestability at a second operating mode (e.g., a low frequency mode). Forexample, high impedance may result at the second operating mode, withthe high impedance causing field issues (e.g., ultrasonic tuningfailures).

It would be desirable to provide improved ultrasonic transducers for usein connection with various applications such as semiconductor packagingequipment (e.g., automatic wire bonding machines, advanced packagingmachines, etc.).

SUMMARY

According to an exemplary embodiment of the invention, an ultrasonictransducer system is provided. The ultrasonic transducer systemincludes: a transducer mounting structure; a transducer, including atleast one mounting flange for coupling the transducer to the transducermounting structure; and a tuned resonator having a desired resonantfrequency, the tuned resonator being integrated with at least one of thetransducer mounting structure and the at least one mounting flange.

According to another exemplary embodiment of the invention, a wirebonding machine is provided. The wire bonding machine includes: asupport structure for supporting a workpiece configured to receive wirebonds during a wire bonding operation; a wire bonding tool configured toform the wire bonds on the workpiece; and an ultrasonic transducersystem such as those described herein (which may be considered asincluding the bonding tool), or other ultrasonic transducer systemswithin the scope of the invention.

According to another exemplary embodiment of the invention, a flip chipbonding machine is provided. The wire bonding machine includes: asupport structure for supporting a workpiece configured to receive asemiconductor element during a flip chip bonding operation; a bondingtool configured to bond the semiconductor element to the substrate; andan ultrasonic transducer system such as those described herein (whichmay be considered as including the bonding tool), or other ultrasonictransducer systems within the scope of the invention.

According to other exemplary embodiments of the invention, methods ofproviding (e.g., using) an ultrasonic transducer system (such as thosedisclosed and claimed herein) are provided. An exemplary method ofproviding an ultrasonic transducer system includes the steps of: (i)providing a transducer and a transducer mounting structure; (ii)coupling the transducer to the transducer mounting structure using atleast one mounting flange of the transducer; and (iii) integrating atuned resonator having a desired resonant frequency with at least one ofthe transducer mounting structure and the at least one mounting flange.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is best understood from the following detailed descriptionwhen read in connection with the accompanying drawings. It is emphasizedthat, according to common practice, the various features of the drawingsare not to scale. On the contrary, the dimensions of the variousfeatures are arbitrarily expanded or reduced for clarity. Included inthe drawings are the following figures:

FIG. 1A is a perspective view an ultrasonic transducer system inaccordance with an exemplary embodiment of the invention;

FIG. 1B is a side view of the ultrasonic transducer system of FIG. 1A;

FIG. 1C is a top view of the ultrasonic transducer system of FIG. 1A;

FIG. 2 is a graph illustrating movement of a mounting structure resonantfrequency away from an operating frequency of an ultrasonic transducer,such that the transducer can operate without substantially interactingwith the mounting structure, in accordance with an exemplary embodimentof the invention;

FIG. 3 is a block diagram of a spring-mass system in accordance with anexemplary embodiment of the invention;

FIG. 4 is an illustration of a tuned resonator of the ultrasonictransducer system of FIGS. 1A-1C in accordance with an exemplaryembodiment of the invention;

FIG. 5A is a perspective view of another ultrasonic transducer system inaccordance with another exemplary embodiment of the invention;

FIG. 5B is a side view of the ultrasonic transducer system of FIG. 5A;

FIG. 5C is a top view of the ultrasonic transducer system of FIG. 5A;

FIG. 6A is a perspective view of yet another ultrasonic transducersystem in accordance with another exemplary embodiment of the invention;

FIG. 6B is a side view of the ultrasonic transducer system of FIG. 6A;

FIG. 6C is a top view of the ultrasonic transducer system of FIG. 6A;

FIG. 7A is a perspective view of yet another ultrasonic transducersystem in accordance with another exemplary embodiment of the invention;

FIG. 7B is a side view of the ultrasonic transducer system of FIG. 7A;

FIG. 7C is a top view of the ultrasonic transducer system of FIG. 7A;

FIG. 8 is a block diagram of a wire bonding machine including anultrasonic transducer system in accordance with an exemplary embodimentof the invention;

FIG. 9 is a block diagram of a flip chip bonding machine including anultrasonic transducer system in accordance with an exemplary embodimentof the invention; and

FIGS. 10-13 are perspective views of various ultrasonic transducersystems for flip chip bonding machines in accordance with variousexemplary embodiments of the invention.

DETAILED DESCRIPTION

As used herein, the term “semiconductor element” is intended to refer toany structure including (or configured to include at a later step) asemiconductor chip or die. Exemplary semiconductor elements include abare semiconductor die, a semiconductor die on a substrate/workpiece(e.g., a leadframe, a PCB, a carrier, etc.), a packaged semiconductordevice, a flip chip semiconductor device, a die embedded in a substrate,a stack of semiconductor die, amongst others. Further, the semiconductorelement may include an element configured to be bonded or otherwiseincluded in a semiconductor package (e.g., a spacer to be bonded in astacked die configuration, a substrate, etc.).

According to various exemplary embodiments of the invention, one or moremechanical resonators, tuned to an ultrasonic transducer operatingfrequency, are used as vibration absorbers to provide dynamic isolationin the mounting of ultrasonic transducers. That is, according to theinvention, the dynamic interaction or “coupling” between the ultrasonictransducer and a mounting structure of the ultrasonic transducer isreduced via active vibration absorption. Reducing the coupling betweenthe transducer and the mounting structure provides better dynamicisolation, resulting in lower operating impedance, less heat-generation,more consistent motion, and thus an overall improvement in operatingefficiency and performance of the transducer. Aspects of the inventionmay be applied as a retrofit to existing applications (e.g., existingsemiconductor packaging machines) or for new applications (e.g., newlydesigned semiconductor packaging machines).

Thus, the use of one or more active tuned mechanical resonators (wherethe tuned resonator may be considered to include a plurality of tunedresonators or tuned resonator elements, where the tuned resonator may beintegrated into the transducer system by removing material by one ormore elements of the system, etc.) for vibration absorption atultrasonic frequencies provides dynamic isolation between an ultrasonictransducer and the mounting structure regardless of the resonancesinherent in the mount. This is in sharp contrast at prior attempts atdynamic isolation which have focused on passive methods such as theaddition of dampening elements (e.g., rubber o-rings).

The dynamic isolation between an ultrasonic transducer and the mountingstructure is a significant challenge, for example, because mountingstructures typically have numerous resonances at ultrasonic frequenciesthat are difficult to predict (e.g., via finite element analysis, FEA).These structural resonances can be variable due to tolerances, andboundary condition changes, such as from mounting and un-mounting thetransducer. Since the mechanical resonator is tuned to the operatingfrequency of the transducer, it has the ability to provide activevibration absorption and isolation by continuously “pushing away” anystructural resonances that would encroach (randomly or consistently)upon the transducer operating frequency. This allows the transducerdesigner more freedom in the design of the mounting structure with lessconcern for dynamic coupling issues.

Impedance variability in ultrasonic transducers may be caused by thedynamic interaction between the transducer and the transducer mountingstructure (e.g., a z-axis link, etc.). An operating mode of thetransducer (e.g., a low frequency mode of a multi-frequency transducer)may have coupling with a parasitic mode, for example, that causes radial“pumping” of the mounting flange (e.g., mounting ears) used to couplethe transducer to the transducer mounting structure. This coupling tendsto excite several modes in the transducer mounting structure thatcoincide with (or are nearby) the operating mode of the transducer.

According to exemplary aspects of the invention, a tuned resonator isused to move a parasitic resonant mode away from the operating mode of atransducer. That is, the tuned resonator (e.g., where the resonator ismounted to the transducer, mounted to the transducer mounting structure,formed in the transducer or mounting structure, etc.) results invibration absorption by providing an offsetting mass at the structuralmode frequency. The resonator may be tuned, for example, using FEAanalysis.

Referring now to the drawings, FIGS. 1A-1C are various views of anultrasonic transducer system 100 in accordance with an exemplaryembodiment of the invention. Ultrasonic transducer system 100 includes atransducer 102 coupled to a transducer mounting structure 104.Transducer 102 includes mounting flanges 102 a for securing transducer102 to transducer mounting structure 104. Fasteners 108 are used tocouple transducer 102 to transducer mounting structure 104 via mountingflanges 102 a. Transducer 102 includes a driver 102 b (e.g., a stack ofpiezoelectric elements) and a working end 102 c. Working end 102 cdefines an aperture 102 c 1 configured to receive a wire bonding tool110.

Ultrasonic transducer system 100 also includes tuned resonators 106(which may also be referred to as tuned resonator elements), where oneof the tuned resonators 106 is provided at each interface (i.e.,connection region) between transducer 102 and transducer mountingstructure 104. Each tuned resonator 106 has a desired resonantfrequency, and is integrated with a mounting flange 102 a to preventdynamic interaction or “coupling” from occurring in mounting structure104. In the example of FIGS. 1A-1C, tuned resonators 106 are inserted asmounting washers under fasteners (e.g., screws) 108 used to securetransducer 102 to transducer mounting structure 104. Tuned resonators106 (e.g., in the form of the illustrated mounting washers) may becoupled directly, or indirectly, to transducer mounting structure 104.

FIG. 2 is a graph illustrating movement of a mounting structure resonantfrequency away from an operating frequency (52 kHz) of an ultrasonictransducer such that the transducer is no longer interacting with themounting structure operating at its resonant frequency. Morespecifically, x2₀ is the original configuration of the mountingstructure which exhibits a resonant frequency that coincides with thetransducer operating frequency (e.g., in this example, 52 kHz). x2 showsthe movement (and splitting) of the mounting structure resonantfrequency away from the transducer operating frequency, resulting in anamplitude node at the transducer operating frequency. x1 shows theamplitude of the resonator(s) relative to the mounting structure, whichprovides the offsetting dynamic mass for moving the mounting structureresonant frequency away from the transducer operating frequency. In thisexample, the mounting structure resonant frequency has been moved usingthe tuned resonators 106 illustrated in FIGS. 1A-1C.

FIG. 3 is a block diagram of a spring-mass system illustrating thestructural mass m₂, and the addition of a tuned resonator mass m₁. Asshown by the spring-mass model of FIG. 3, and the graph of FIG. 2, theaddition of the tuned resonator mass m₁ causes a shift in the mainstructure resonance, creating new “split-modes” around the transduceroperating frequency in the form of “in-phase” and “out-of-phase” modeswith the tuned mass.

FIG. 4 illustrates a tuned resonator 106 (from FIGS. 1A-1C) shown in abending operation through FEA modelling. Tuned resonator 106 includes: afixed part 106 a (configured to be coupled to a transducer mountingstructure 104 using fastener 108 via mounting flange 102 a)(corresponding to structure m₂ in FIG. 3); tuned mass 106 b(corresponding to structure m₁ in FIG. 3); and spring part 106 c(defining a hole or opening 106 c 1) (corresponding to spring k₁ in FIG.3).

While FIGS. 1A-1C illustrate an example of tuned resonators 106 providedas “washers” engaged at mounting flanges 102 a of transducer 102, it isunderstood that other alternative tuned resonators are contemplated. Forexample, see FIGS. 5A-5C, FIGS. 6A-6C, and FIGS. 7A-7C.

Referring specifically to FIGS. 5A-5C, ultrasonic transducer system 500is provided. Ultrasonic transducer system 500 includes a transducer 502coupled to a transducer mounting structure 504. Transducer 502 includesmounting flanges 502 a for securing transducer 502 to transducermounting structure 504. Fasteners 508 are used to couple transducer 502to transducer mounting structure 504 via mounting flanges 502 a.Transducer 502 includes a driver 502 b (e.g., a stack of piezoelectricelements) and a working end 502 c. Working end 502 c defines an aperture502 c 1 configured to receive a wire bonding tool 510. Ultrasonictransducer system 500 also includes tuned resonators 506 integrated withtransducer mounting structure 504 by removing material from transducermounting structure 504 (e.g., by EDM, laser machining, etc.) such thatspaces 504 a are defined around portions of tuned resonators 506. Eachtuned resonator 506 has a desired resonant frequency, and is integratedwith transducer mounting structure 504 to prevent dynamic interaction or“coupling” from occurring in mounting structure 504.

Referring specifically to FIGS. 6A-6C, ultrasonic transducer system 600is provided. Ultrasonic transducer system 600 includes a transducer 602coupled to a transducer mounting structure 604. Transducer 602 includesmounting flanges 602 a for securing transducer 602 to transducermounting structure 604. Fasteners 608 are used to couple transducer 602to transducer mounting structure 604 via mounting flanges 602 a.Transducer 602 includes a driver 602 b (e.g., a stack of piezoelectricelements) and a working end 602 c. Working end 602 c defines an aperture602 c 1 configured to receive a wire bonding tool 610. Ultrasonictransducer system 600 also includes tuned resonators 606 integrated withtransducer mounting structure 604 by securing tuned resonators 606 totransducer mounting structure 604 (where tuned resonator elements 606may be directly, or indirectly, coupled to transducer mounting structure604 using fasteners 612). Each tuned resonator 606 has a desiredresonant frequency, and is integrated with transducer mounting structure604 to prevent dynamic interaction or “coupling” from occurring inmounting structure 604.

Referring specifically to FIGS. 7A-7C, ultrasonic transducer system 700is provided. Ultrasonic transducer system 700 includes a transducer 702coupled to a transducer mounting structure 704. Transducer 702 includesmounting flanges 702 a for securing transducer 702 to transducermounting structure 704. Fasteners 708 are used to couple transducer 702to transducer mounting structure 704 via mounting flanges 702 a.Transducer 702 includes a driver 702 b (e.g., a stack of piezoelectricelements) and a working end 702 c. Working end 702 c defines an aperture702 c 1 configured to receive a wire bonding tool 710. Ultrasonictransducer system 700 also includes tuned resonators 706 integrated withmounting flanges 702 a by removing material from mounting flanges 702 a(e.g., by EDM, laser machining, etc.) such that spaces 702 a 1 aredefined around portions of tuned resonators 706. Each tuned resonator706 has a desired resonant frequency, and is integrated with mountingflanges 702 a to prevent dynamic interaction or “coupling” fromoccurring in mounting structure 704.

FIG. 8 is a block diagram of a wire bonding machine 800 including anultrasonic transducer system 810, carried by a bond head assembly 808,in accordance with an exemplary embodiment of the invention. Ultrasonictransducer system 812 may correspond to any ultrasonic transducer systemwithin the scope of the invention such as ultrasonic transducer system100 (see FIGS. 1A-1C), ultrasonic transducer system 500 (see FIGS.5A-5C), ultrasonic transducer system 600 (see FIGS. 6A-6C), orultrasonic transducer system 700 (see FIGS. 7A-7C). Wire bonding machine800 also includes a support structure 802 supporting semiconductorelement 804 (or substrate 804, such as a leadframe). Semiconductorelement 806 is supported by semiconductor element 804. A wire loop isbeing formed between semiconductor element 806 and semiconductor element804. Wire loop 814 includes a first bond bonded to a bonding location onsemiconductor element 806 (using the wire bonding tool 810), a length ofwire extending from the first bond, and will include a second bondbonded to a bonding location on semiconductor element 804. Wire bondingtool 810 (of ultrasonic transducer system 812) is carried by atransducer of ultrasonic transducer system 812 (where the transducer isnot specifically shown in FIG. 8, but see transducers 102, 502, 602, and702 in FIGS. 1A-1C, 5A-5C, 6A-6C, and 7A-7C, respectively).

FIG. 9 is a block diagram of a flip chip bonding machine 900 includingan ultrasonic transducer system 912 in accordance with an exemplaryembodiment of the invention. While ultrasonic transducer system 912 ispart of a flip chip bonding machine (as opposed to a wire bondingmachine shown in FIG. 8, or contemplated in FIGS. 1A-1C, 5A-5C, 6A-6C,and 7A-7C), the teachings of the various aspects of the invention mayhave use in varying applications such as, for example, flip chip bondingmachines. Thus, in a flip chip bonding machine (such as in FIG. 9), atuned resonator may be provided (e.g., by integrating a tuned resonatorby adding elements, or removing material, as described in connectionwith the various embodiments of the invention such as in connection withFIGS. 1A-1C, 5A-5C, 6A-6C, and 7A-7C).

Flip chip bonding machine 900 includes a support structure 902supporting semiconductor element 904 including electrically conductivestructures 904 a (only two electrically conductive structures 904 a areshown, but it is understood that many conductive structures may beprovided). Bonding tool 910 (carried by a transducer included inultrasonic transducer system 912) is part of bond head assembly 908.Bonding tool 910 carries semiconductor element 906, includingelectrically conductive structures 906 a (only two electricallyconductive structures 906 a are shown, but it is understood that manyconductive structures may be provided). Electrically conductivestructures 906 a are aligned with electrically conductive structures 904a before bonding of semiconductor element 906 to semiconductor element904 using bonding tool 910 (utilizing ultrasonic bonding energy providedby transducer).

Ultrasonic transducer system 912 includes (a) a transducer mountingstructure, (b) a transducer, including at least one mounting flange forcoupling the transducer to the transducer mounting structure, and (c) atuned resonator having a desired resonant frequency. While theseindividual elements are not shown in FIG. 9, it is understood that suchelements may be similar to those in FIGS. 1A-1C, 5A-5C, 6A-6C, and7A-7C, except for the change in application (e.g., wire bonding versusflip chip bonding). The tuned resonator is integrated with at least oneof the transducer mounting structure and the at least one mountingflange with the same functional objective as described in connectionwith the various exemplary embodiments of the invention described herein(e.g., where each tuned resonator has a desired resonant frequency, andis integrated with the transducer mounting structure and/or mountingflange(s) to prevent dynamic interaction or “coupling” from occurring inthe transducer mounting structure).

FIGS. 10-13 illustrate ultrasonic transducer systems 1000, 1100, 1200,and 1300 for flip chip bonding machines in accordance with variousexemplary embodiments of the invention. More specifically, ultrasonictransducer system 912 of FIG. 9 may take any of a number ofconfigurations, including those illustrated in FIGS. 10-13 in connectionwith ultrasonic transducer systems 1000, 1100, 1200, and 1300. Forsimplicity and ease of illustration: FIG. 10 is very similar to FIG. 1A,with like reference numerals pointing to like elements; FIG. 11 is verysimilar to FIG. 5A, with like reference numerals pointing to likeelements; FIG. 12 is very similar to FIG. 6A, with like referencenumerals pointing to like elements; and FIG. 13 is very similar to FIG.7A, with like reference numerals pointing to like elements. Thus, adescription of such elements with like reference numerals is omitted.However, each of FIGS. 10-13 illustrates a working end 102 c, 502 c, 602c, 702 c of the respective transducer 102, 502, 602, 702. Each of theseworking ends 102 c, 502 c, 602 c, 702 c is holding a flip chip bondingtool 1002 including a shaft portion 1002 a and a base portion 1002 b.Base portion 1002 b holds a semiconductor element 1004 (e.g., by vacuumor the like drawn through bonding tool 1002), and is configured to bond(e.g., where the bonding process includes ultrasonic bonding)semiconductor element 1004 in connection with a flipchip bondingoperation.

Although the invention has been described primarily with respect toultrasonic transducer systems for use in connection semiconductorpackaging machines (e.g., wire bonding machines, flip chip bondingmachines, wafer level bonding machines), it is not limited thereto. Theteachings of the invention may be applicable to various additionalapplications of ultrasonic transducer systems outside of the area ofsemiconductor packaging.

Although the invention has been described primarily with respect to atuned resonator (or a plurality of tuned resonators) tuned to anoperating frequency of the transducer, it is contemplated that each of aplurality of tuned resonators may each be tuned to one of a plurality ofoperating frequencies of the transducer. For example, in FIGS. 1A-1C,two different tuned resonators 106 are shown. Each of these tunedresonators 106 may be tuned to the same operating frequency of thetransducer, or each of these tuned resonators 106 may be tuned todifferent operating frequencies of the transducer. Further still, eachtuned resonator 106 may be tuned to multiple operating frequencies ofthe transducer.

Although the invention is illustrated and described herein withreference to specific embodiments, the invention is not intended to belimited to the details shown. Rather, various modifications may be madein the details within the scope and range of equivalents of the claimsand without departing from the invention.

What is claimed:
 1. An ultrasonic transducer system comprising: atransducer mounting structure; a transducer, including one or moremounting flanges for coupling the transducer to the transducer mountingstructure; a first tuned resonator, the first tuned resonator beingintegrated with at least one of the transducer mounting structure and atleast one of the one or more mounting flanges, the first tuned resonatorbeing tuned to a first operating frequency of the transducer to provideactive vibration absorption and isolation by continuously pushing awaystructural resonances that would encroach on the first operatingfrequency; and a second tuned resonator, the second tuned resonatorbeing integrated with at least one of the transducer mounting structureand at least one of the one or more mounting flanges, the second tunedresonator being tuned to a second operating frequency of the transducerto provide active vibration absorption and isolation by continuouslypushing away structural resonances that would encroach on the secondoperating frequency, wherein the first operating frequency and thesecond operating frequency are different from one another.
 2. Theultrasonic transducer system of claim 1 wherein the first tunedresonator is also tuned to the second operating frequency of thetransducer to provide active vibration absorption and isolation bycontinuously pushing away structural resonances that would encroach onthe second operating frequency.
 3. The ultrasonic transducer system ofclaim 1 wherein each of the first tuned resonator and the second tunedresonator are configured to absorb vibration from the transducermounting structure.
 4. The ultrasonic transducer system of claim 1wherein the first tuned resonator is configured to move a first resonantfrequency of the transducer mounting structure away from the firstoperating frequency, and the second tuned resonator is configured tomove a second resonant frequency of the transducer mounting structureaway from the second operating frequency.
 5. The ultrasonic transducerof claim 1 wherein each of the first tuned resonator and the secondtuned resonator is coupled to the transducer mounting structure.
 6. Theultrasonic transducer of claim 1 wherein each of the first tunedresonator and the second tuned resonator is coupled to the transducermounting structure indirectly through at least one intermediatestructure.
 7. The ultrasonic transducer of claim 1 wherein each of thefirst tuned resonator and the second tuned resonator includes aplurality of tuned resonator elements coupled to the transducer mountingstructure.
 8. The ultrasonic transducer of claim 1 wherein each of thefirst tuned resonator and the second tuned resonator is coupled to atleast one of the one or more mounting flanges.
 9. The ultrasonictransducer of claim 1 wherein each of the first tuned resonator and thesecond tuned resonator is coupled to at least one of the one or moremounting flanges indirectly through at least one intermediate structure.10. The ultrasonic transducer of claim 1 wherein the transducer includesa plurality of mounting flanges, and each of the first tuned resonatorand the second tuned resonator is coupled to a respective one of theplurality of mounting flanges.
 11. The ultrasonic transducer of claim 1wherein each of the first tuned resonator and the second tuned resonatoris modeled to include a respective mass and a respective spring having acorresponding resonant frequency tuned to a corresponding desiredfrequency.
 12. The ultrasonic transducer of claim 1 wherein each of thefirst tuned resonator and the second tuned resonator is integrated withthe transducer mounting structure by removing material from thetransducer mounting structure.
 13. The ultrasonic transducer of claim 1each of the first tuned resonator and the second tuned resonator isintegrated with at least one of the one or more mounting flanges byremoving material from the at least one of the one or more mountingflanges.
 14. A wire bonding machine comprising: a support structure forsupporting a workpiece configured to receive wire bonds during a wirebonding operation; a wire bonding tool configured to form the wire bondson the workpiece; and an ultrasonic transducer system for carrying thewire bonding tool, the ultrasonic transducer system including (a) atransducer mounting structure, (b) a transducer, including one or moremounting flanges for coupling the transducer to the transducer mountingstructure, (c) a first tuned resonator, the first tuned resonator beingintegrated with at least one of the transducer mounting structure and atleast one of the one or more mounting flanges, the first tuned resonatorbeing tuned to a first operating frequency of the transducer to provideactive vibration absorption and isolation by continuously pushing awaystructural resonances that would encroach on the first operatingfrequency, (d) a second tuned resonator, the second tuned resonatorbeing integrated with at least one of the transducer mounting structureand at least one of the one or more mounting flanges, the second tunedresonator being tuned to a second operating frequency of the transducerto provide active vibration absorption and isolation by continuouslypushing away structural resonances that would encroach on the secondoperating frequency, wherein the first operating frequency and thesecond operating frequency are different from one another.
 15. A flipchip bonding machine comprising: a support structure for supporting aworkpiece configured to receive a semiconductor element during a flipchip bonding operation; a bonding tool configured to bond thesemiconductor element to a substrate; and an ultrasonic transducersystem for carrying the bonding tool, the ultrasonic transducer systemincluding (a) a transducer mounting structure, (b) a transducer,including one or more mounting flanges for coupling the transducer tothe transducer mounting structure, (c) a first tuned resonator, thefirst tuned resonator being integrated with at least one of thetransducer mounting structure and at least one of the one or moremounting flanges, the first tuned resonator being tuned to a firstoperating frequency of the transducer to provide active vibrationabsorption and isolation by continuously pushing away structuralresonances that would encroach on the first operating frequency, (d) asecond tuned resonator, the second tuned resonator being integrated withat least one of the transducer mounting structure and at least one ofthe one or more mounting flanges, the second tuned resonator being tunedto a second operating frequency of the transducer to provide activevibration absorption and isolation by continuously pushing awaystructural resonances that would encroach on the second operatingfrequency, wherein the first operating frequency and the secondoperating frequency are different from one another.
 16. A method ofproviding an ultrasonic transducer system, the method comprising thesteps of: (a) providing a transducer and a transducer mountingstructure; (b) coupling the transducer to the transducer mountingstructure using one or more mounting flanges of the transducer; (c)integrating a first tuned resonator with at least one of the transducermounting structure and at least one of the one or more mounting flanges,the first tuned resonator being tuned to a first operating frequency ofthe transducer to provide active vibration absorption and isolation bycontinuously pushing away structural resonances that would encroach onthe first operating frequency; and (d) integrating a second tunedresonator with at least one of the transducer mounting structure and atleast one of the one or more mounting flanges, the second tunedresonator being tuned to a second operating frequency of the transducerto provide active vibration absorption and isolation by continuouslypushing away structural resonances that would encroach on the secondoperating frequency wherein the first operating frequency and the secondoperating frequency are different from one another.
 17. The method ofclaim 16 wherein step (c) includes integrating the first tuned resonatorto move a resonant frequency of the transducer mounting structure awayfrom the first operating frequency.
 18. The method of claim 16 whereinstep (c) includes coupling each of the first tuned resonator and thesecond tuned resonator to the transducer mounting structure.
 19. Themethod of claim 16 wherein step (c) includes coupling each of the firsttuned resonator and the second tuned resonator to at least one of theone or more mounting flanges.
 20. The method of claim 16 wherein theeach of the first tuned resonator and the second tuned resonatorincludes a corresponding plurality of tuned resonator elements.
 21. Themethod of claim 16 wherein step (c) includes removing material from thetransducer mounting structure.